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onsemi MMBT3904LT1G BJTs

NPN BJT Transistor 40V 200mA 300MHz SOT-23

1,958,348 ActiveonsemiMMBT3904LTSOT-23$0.01
MMBT3904LT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMBT3904LT1G
Manufacturer
Part Number (MPN)
MMBT3904LT1G
Base Model
Detailed Description
NPN BJT Transistor 40V 200mA 300MHz SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMBT3904LT1G Datasheet
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Ordering Code Family

MMBT3904LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

onsemi MMBT3904LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 10mA, 1V
Power Max
300 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
200 mA
Voltage Collector Emitter Breakdown Max
40 V

Alternate Parts Comparison (MMBT3904LT1G vs MMBT3904LT1 vs MMBT3904LT3G vs MMBT5551LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3--TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Collector IC Max200 mA--200 mA600 mA
Dc Current Gain Hfe Min IC Vce100 @ 10mA, 1V--100 @ 10mA, 1V80 @ 10mA, 5V
DescriptionTRANS NPN 40V 0.2A SOT23-3--TRANS NPN 40V 0.2A SOT23-3TRANS NPN 160V 0.6A SOT23-3
Detailed DescriptionBipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236)--Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)
Power Max300 mW--300 mW225 mW
Transistor TypeNPN--NPNNPN
Vce Saturation Max Ib IC300mV @ 5mA, 50mA--300mV @ 5mA, 50mA200mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max40 V--40 V160 V
Action

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