onsemi MMBT5551LT1G BJTs
NPN BJT Transistor 160V 0.6A SOT-23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMBT5551LT1G
Base Model
Detailed Description
NPN BJT Transistor 160V 0.6A SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
MMBT5551LT1G Datasheet
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Technical Specifications
onsemi MMBT5551LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA
Dc Current Gain Hfe Min IC Vce
80 @ 10mA, 5V
Power Max
225 mW
Transistor Type
NPN
Current Collector IC Max
600 mA
Voltage Collector Emitter Breakdown Max
160 V
Alternate Parts Comparison (MMBT5551LT1G vs MMBT5551LT3G vs MMBT3904LT1G vs MMUN2213LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 600 mA | 600 mA | 200 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 10mA, 5V | 80 @ 10mA, 5V | 100 @ 10mA, 1V | 80 @ 5mA, 10V |
| Description | TRANS NPN 160V 0.6A SOT23-3 | TRANS NPN 160V 0.6A SOT23-3 | TRANS NPN 40V 0.2A SOT23-3 | TRANS PREBIAS NPN 50V SOT23-3 |
| Detailed Description | Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) |
| Power Max | 225 mW | 225 mW | 300 mW | 246 mW |
| Transistor Type | NPN | NPN | NPN | NPN - Pre-Biased |
| Vce Saturation Max Ib IC | 200mV @ 5mA, 50mA | 200mV @ 5mA, 50mA | 300mV @ 5mA, 50mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 160 V | 160 V | 40 V | 50 V |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- |
| Action |
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