onsemi MJD200T4G BJTs
5A 25V NPN BJT Power Transistor, DPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD200T4G
Detailed Description
5A 25V NPN BJT Power Transistor, DPAK
Package
DPAK
Lifecycle Status
Active
Datasheet
MJD200T4G Datasheet
Quick Jump:
Technical Specifications
onsemi MJD200T4G BJTs technical specifications.
General
RoHS
Yes
Number of Pins
3
Package / Case
DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
40 V
Collector Emitter Breakdown Voltage
25 V
Collector Emitter Saturation Voltage
1.8 V
Collector Emitter Voltage Vceo
25 V
Alternate Parts Comparison (MJD200T4G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | 3 | 3 | -- | -- |
| RoHS | Yes | Compliant | True | -- |
| Lifecycle Status | Active | Production | Active | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | 40 V | 70 V | -- | -- |
| Collector Emitter Breakdown Voltage | 25 V | 60 V | -- | -- |
| Collector Emitter Saturation Voltage | 1.8 V | 1.1 V | -- | -- |
| Collector Emitter Voltage Vceo | 25 V | 60 V | -- | -- |
| Current Rating | 5 A | 10 A | -- | -- |
| Element Configuration | Single | Single | -- | -- |
| Emitter Base Voltage Vebo | 8 V | 5 V | -- | -- |
| Action |
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