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onsemi NJVMJD50T4G BJTs

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

2,500 ActiveonsemiTO-252-3, DPAK (2 Leads + Tab), SC-63$3.29
NJVMJD50T4G TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

NJVMJD50T4G
Manufacturer
Part Number (MPN)
NJVMJD50T4G
Detailed Description
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF NJVMJD50T4G Datasheet
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Technical Specifications

onsemi NJVMJD50T4G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 300mA, 10V
Power Max
1.56 W
Frequency Transition
10MHz
Transistor Type
NPN
Current Collector IC Max
1 A

Related Parts Comparison (NJVMJD50T4G vs NJVMJD32CT4G vs NJVMJD31CRLG vs MJD127)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPak
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveObsolete
Current Collector Cutoff Max200µA50µA50µA10 µA
Current Collector IC Max1 A3 A3 A8 A
Dc Current Gain Hfe Min IC Vce30 @ 300mA, 10V25 @ 1A, 4V10 @ 3A, 4V1000 @ 4A, 4V
Frequency Transition10MHz3MHz3MHz4 MHz
Power Max1.56 W1.56 W1.56 W20 W
Transistor TypeNPNPNPNPNPNP - Darlington
Vce Saturation Max Ib IC1V @ 200mA, 1A1.2V @ 375mA, 3A1.2V @ 375mA, 3A2V @ 16mA, 4A
Voltage Collector Emitter Breakdown Max400 V100 V100 V100 V
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)--
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