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onsemi NJVMJD50T4G BJTs

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

2,500 ActiveonsemiTO-252-3, DPAK (2 Leads + Tab), SC-63$3.29
NJVMJD50T4G TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

NJVMJD50T4G
Manufacturer
Part Number (MPN)
NJVMJD50T4G
Detailed Description
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF NJVMJD50T4G Datasheet
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Technical Specifications

onsemi NJVMJD50T4G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 300mA, 10V
Power Max
1.56 W
Frequency Transition
10MHz
Transistor Type
NPN
Current Collector IC Max
1 A

Alternate Parts Comparison (NJVMJD50T4G vs NJVMJD32CT4G vs NJVMJD31CRLG vs MJD127)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPak
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveObsolete
Current Collector Cutoff Max200µA50µA50µA10 µA
Current Collector IC Max1 A3 A3 A8 A
Dc Current Gain Hfe Min IC Vce30 @ 300mA, 10V25 @ 1A, 4V10 @ 3A, 4V1000 @ 4A, 4V
Frequency Transition10MHz3MHz3MHz4 MHz
Power Max1.56 W1.56 W1.56 W20 W
Transistor TypeNPNPNPNPNPNP - Darlington
Vce Saturation Max Ib IC1V @ 200mA, 1A1.2V @ 375mA, 3A1.2V @ 375mA, 3A2V @ 16mA, 4A
Voltage Collector Emitter Breakdown Max400 V100 V100 V100 V
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)--
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