onsemi NJVMJD42CT4G BJTs
PNP BJT 100V 6A DPAK Power Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJVMJD42CT4G
Detailed Description
PNP BJT 100V 6A DPAK Power Transistor
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
NJVMJD42CT4G Datasheet
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Technical Specifications
onsemi NJVMJD42CT4G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
1.75 W
Frequency Transition
3MHz
Grade
Automotive
Transistor Type
PNP
Qualification
AEC-Q101
Alternate Parts Comparison (NJVMJD42CT4G vs NJVMJD31CRLG vs NJVMJD32CT4G vs MJD112G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 50µA | 50µA | 50µA | 20µA |
| Current Collector IC Max | 6 A | 3 A | 3 A | 2 A |
| Dc Current Gain Hfe Min IC Vce | 30 @ 300mA, 4V | 10 @ 3A, 4V | 25 @ 1A, 4V | 1000 @ 2A, 3V |
| Frequency Transition | 3MHz | 3MHz | 3MHz | 25MHz |
| Power Max | 1.75 W | 1.56 W | 1.56 W | 1.75 W |
| Transistor Type | PNP | NPN | PNP | NPN - Darlington |
| Vce Saturation Max Ib IC | 1.5V @ 600mA, 6A | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A | 3V @ 40mA, 4A |
| Voltage Collector Emitter Breakdown Max | 100 V | 100 V | 100 V | 100 V |
| Action |
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