onsemi NJVMJD31CT4G BJTs
3.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJVMJD31CT4G
Detailed Description
3.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
NJVMJD31CT4G Datasheet
Quick Jump:
Technical Specifications
onsemi NJVMJD31CT4G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
1.56 W
Frequency Transition
3MHz
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101
Alternate Parts Comparison (NJVMJD31CT4G vs NJVMJD32CT4G vs NJVMJD31CRLG vs MJD127)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPak |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Collector Cutoff Max | 50µA | 50µA | 50µA | 10 µA |
| Current Collector IC Max | 3 A | 3 A | 3 A | 8 A |
| Dc Current Gain Hfe Min IC Vce | 25 @ 1A, 4V | 25 @ 1A, 4V | 10 @ 3A, 4V | 1000 @ 4A, 4V |
| Frequency Transition | 3MHz | 3MHz | 3MHz | 4 MHz |
| Power Max | 1.56 W | 1.56 W | 1.56 W | 20 W |
| Transistor Type | NPN | PNP | NPN | PNP - Darlington |
| Vce Saturation Max Ib IC | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A | 2V @ 16mA, 4A |
| Voltage Collector Emitter Breakdown Max | 100 V | 100 V | 100 V | 100 V |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -- |
| Action |
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