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onsemi NJVMJD243T4G BJTs

4.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

58 ActiveonsemiTO-252-3, DPAK (2 Leads + Tab), SC-63$2.34
NJVMJD243T4G TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

NJVMJD243T4G
Manufacturer
Part Number (MPN)
NJVMJD243T4G
Detailed Description
4.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF NJVMJD243T4G Datasheet
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Technical Specifications

onsemi NJVMJD243T4G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 200mA, 1V
Power Max
1.4 W
Frequency Transition
40MHz
Transistor Type
NPN
Current Collector IC Max
4 A

Related Parts Comparison (NJVMJD243T4G vs NJVMJD32CT4G vs NJVMJD31CRLG vs MJD127)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPak
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveObsolete
Current Collector Cutoff Max100nA (ICBO)50µA50µA10 µA
Current Collector IC Max4 A3 A3 A8 A
Dc Current Gain Hfe Min IC Vce40 @ 200mA, 1V25 @ 1A, 4V10 @ 3A, 4V1000 @ 4A, 4V
Frequency Transition40MHz3MHz3MHz4 MHz
Power Max1.4 W1.56 W1.56 W20 W
Transistor TypeNPNPNPNPNPNP - Darlington
Vce Saturation Max Ib IC600mV @ 100mA, 1A1.2V @ 375mA, 3A1.2V @ 375mA, 3A2V @ 16mA, 4A
Voltage Collector Emitter Breakdown Max100 V100 V100 V100 V
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)--
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