onsemi NJV4031NT3G BJTs
3.0 A, 40 V NPN Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJV4031NT3G
Base Model
Detailed Description
3.0 A, 40 V NPN Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
NJV4031NT3G Datasheet
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Technical Specifications
onsemi NJV4031NT3G BJTs technical specifications.
General
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN 40V 3A SOT223
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 3 A 215MHz 2 W Surface Mount SOT-223 (TO-261)
Dc Current Gain Hfe Min IC Vce
200 @ 1A, 1V
Power Max
2 W
Frequency Transition
215MHz
Transistor Type
NPN
Alternate Parts Comparison (NJV4031NT3G vs NJV4031NT1G vs NJVNJD2873T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 175°C (TJ) |
| Number of Pins | -- | -- | 3 |
| RoHS | -- | -- | Compliant |
| Lifecycle Status | Active | Active | Active |
| China ROHS | -- | -- | Non-Compliant |
| Collector Base Voltage Vcbo | -- | -- | 50 V |
| Collector Emitter Breakdown Voltage | -- | -- | 50 V |
| Collector Emitter Saturation Voltage | -- | -- | 300 mV |
| Collector Emitter Voltage Vceo | -- | -- | 50 V |
| Contact Plating | -- | -- | Tin |
| Element Configuration | -- | -- | Single |
| Emitter Base Voltage Vebo | -- | -- | 5 V |
| Action |
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