onsemi NJT4030PT1G BJTs
PNP BJT 40V 3A 2W SOT-223 Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJT4030PT1G
Detailed Description
PNP BJT 40V 3A 2W SOT-223 Transistor
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
NJT4030PT1G Datasheet
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Technical Specifications
onsemi NJT4030PT1G BJTs technical specifications.
General
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 1A, 1V
Power Max
2 W
Frequency Transition
160MHz
Transistor Type
PNP
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
40 V
Alternate Parts Comparison (NJT4030PT1G vs NJT4030PT3G vs NJT4031NT3G vs NJT4031NT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 4 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 40 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 40 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 500 mV | -- | -- |
| Collector Emitter Voltage Vceo | -- | 40 V | -- | -- |
| Contact Plating | -- | Tin | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Action |
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