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onsemi MSB92T1G BJTs

High Voltage PNP Bipolar Transistor, SC-59 3 LEAD, 3000-REEL

100 ActiveonsemiTO-236-3, SC-59, SOT-23-3$0.22
MSB92T1G TO-236-3, SC-59, SOT-23-3 package illustration

Same model may have multiple batches, images only for reference.

MSB92T1G
Manufacturer
Part Number (MPN)
MSB92T1G
Detailed Description
High Voltage PNP Bipolar Transistor, SC-59 3 LEAD, 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF MSB92T1G Datasheet
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Technical Specifications

onsemi MSB92T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
25 @ 30mA, 10V
Power Max
150 mW
Frequency Transition
50MHz
Transistor Type
PNP
Current Collector IC Max
150 mA

Alternate Parts Comparison (MSB92T1G vs SMMBFJ175LT1G vs NSVMMUN2112LT1G vs NSVMMUN2230LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Power Max150 mW225 mW246 mW246 mW
RoHSYes--YesYes
Current Collector Cutoff Max250nA (ICBO)--500nA500nA
Current Collector IC Max150 mA--100 mA100 mA
Dc Current Gain Hfe Min IC Vce25 @ 30mA, 10V--60 @ 5mA, 10V3 @ 5mA, 10V
PackageSC-70-3--SOT23-3SOT23-3
Transistor TypePNP--PNP - Pre-BiasedNPN - Pre-Biased
Vce Saturation Max Ib IC500mV @ 2mA, 20mA--250mV @ 300µA, 10mA250mV @ 5mA, 10mA
Voltage Collector Emitter Breakdown Max300 V--50 V50 V
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