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onsemi MMUN2234LT1G BJTs

NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL

1,512,000 ActiveonsemiSOT-23$0.03
MMUN2234LT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMUN2234LT1G
Manufacturer
Part Number (MPN)
MMUN2234LT1G
Detailed Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMUN2234LT1G Datasheet
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Technical Specifications

onsemi MMUN2234LT1G BJTs technical specifications.

General

RoHS
True
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
47 kOhms
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased
Power Max
246 mW

Alternate Parts Comparison (MMUN2234LT1G vs MMUN2213LT1G vs MMBT3904LT1G vs BC849CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveProduction
Current Collector IC Max100 mA100 mA200 mA100 mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V80 @ 5mA, 10V100 @ 10mA, 1V420 @ 2mA, 5V
Power Max246 mW246 mW300 mW300 mW
Transistor TypeNPN - Pre-BiasedNPN - Pre-BiasedNPNNPN
Vce Saturation Max Ib IC250mV @ 1mA, 10mA250mV @ 300µA, 10mA300mV @ 5mA, 50mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max50 V50 V40 V30 V
Current Collector Cutoff Max500nA500nA--15nA (ICBO)
Action

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