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onsemi MMBT8099LT1G BJTs

NPN BJT 80V 500mA 150MHz SOT-23 Transistor

990 ActiveonsemiTO-236-3, SC-59, SOT-23-3$0.15
MMBT8099LT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMBT8099LT1G
Manufacturer
Part Number (MPN)
MMBT8099LT1G
Detailed Description
NPN BJT 80V 500mA 150MHz SOT-23 Transistor
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF MMBT8099LT1G Datasheet
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Technical Specifications

onsemi MMBT8099LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN 80V 0.5A SOT23-3
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 500 mA 150MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Dc Current Gain Hfe Min IC Vce
100 @ 1mA, 5V
Power Max
225 mW
Frequency Transition
150MHz
Transistor Type
NPN

Alternate Parts Comparison (MMBT8099LT1G vs MMBT3906LT1H vs SMMBFJ175LT1G vs NSVMMUN2112LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS NPN 80V 0.5A SOT23-3TRANS PNP 40V 0.2A SOT23-3JFET P-CH 30V SOT23-3TRANS PREBIAS PNP 50V SOT23-3
Detailed DescriptionBipolar (BJT) Transistor NPN 80 V 500 mA 150MHz 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 225 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW225 mW225 mW246 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
Current Collector Cutoff Max100nA50nA--500nA
Current Collector IC Max500 mA200 mA--100 mA
Dc Current Gain Hfe Min IC Vce100 @ 1mA, 5V100 @ 10mA, 1V--60 @ 5mA, 10V
Transistor TypeNPNPNP--PNP - Pre-Biased
Vce Saturation Max Ib IC400mV @ 5mA, 100mA400mV @ 5mA, 50mA--250mV @ 300µA, 10mA
Action

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