onsemi MMBT4126LT1G BJTs
PNP BJT Transistor, 25V, 200mA, 250MHz, SOT-23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMBT4126LT1G
Detailed Description
PNP BJT Transistor, 25V, 200mA, 250MHz, SOT-23
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
MMBT4126LT1G Datasheet
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Technical Specifications
onsemi MMBT4126LT1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 2mA, 1V
Power Max
225 mW
Frequency Transition
250MHz
Transistor Type
PNP
Current Collector IC Max
200 mA
Alternate Parts Comparison (MMBT4126LT1G vs MMBT3906LT1H vs SMMBFJ175LT1G vs NSVMMUN2112LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Power Max | 225 mW | 225 mW | 225 mW | 246 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- |
| RoHS | Yes | Yes | -- | Yes |
| Current Collector IC Max | 200 mA | 200 mA | -- | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 120 @ 2mA, 1V | 100 @ 10mA, 1V | -- | 60 @ 5mA, 10V |
| Package | SOT-23-3 | SOT23-3 | -- | SOT23-3 |
| Transistor Type | PNP | PNP | -- | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 400mV @ 5mA, 50mA | 400mV @ 5mA, 50mA | -- | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 25 V | 40 V | -- | 50 V |
| Action |
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