onsemi MJ11033G BJTs
HIGH-CURRENT PNP SILICON POWER T
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJ11033G
Detailed Description
HIGH-CURRENT PNP SILICON POWER T
Package
TO-204AE
Lifecycle Status
Active
Datasheet
MJ11033G Datasheet
Quick Jump:
Technical Specifications
onsemi MJ11033G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-204AE
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
2mA
Dc Current Gain Hfe Min IC Vce
1000 @ 25A, 5V
Power Max
300 W
Transistor Type
PNP - Darlington
Current Collector IC Max
50 A
Alternate Parts Comparison (MJ11033G vs MJD3055T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Package / Case | TO-204AE | TO-252-3, DPAK |
| Mounting Type | Through Hole | Surface Mount |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Compliant |
| Lifecycle Status | Active | Production |
| Current Collector Cutoff Max | 2mA | 50µA |
| Current Collector IC Max | 50 A | 10 A |
| Dc Current Gain Hfe Min IC Vce | 1000 @ 25A, 5V | 20 @ 4A, 4V |
| Package | TO-204-2 | DPAK |
| Polarity | PNP | NPN |
| Power Max | 300 W | 1.75 W |
| Transistor Type | PNP - Darlington | NPN |
| Action |
More Parts in BJTs
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