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onsemi BUV21G BJTs

200V 40A NPN BJT Power Transistor, TO-3

3 ActiveonsemiTO-204AE$36.66
BUV21G - No Image Available

Same model may have multiple batches, images only for reference.

BUV21G
Manufacturer
Part Number (MPN)
BUV21G
Detailed Description
200V 40A NPN BJT Power Transistor, TO-3
Package
TO-204AE
Lifecycle Status
Active
Datasheet
PDF BUV21G Datasheet
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Technical Specifications

onsemi BUV21G BJTs technical specifications.

General

Series
SWITCHMODE™
Package / Case
TO-204AE
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
3mA
Dc Current Gain Hfe Min IC Vce
20 @ 12A, 2V
Power Max
250 W
Frequency Transition
8MHz
Transistor Type
NPN

Alternate Parts Comparison (BUV21G vs BUV22G vs BUV48A vs MBT3906DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)---55°C ~ 150°C (TJ)
Number of Pins------6
RoHS------Compliant
Lifecycle StatusActiveActive--Production
China ROHS------Compliant
Collector Base Voltage Vcbo------40 V
Collector Emitter Breakdown Voltage------40 V
Collector Emitter Saturation Voltage-------400 mV
Collector Emitter Voltage Vceo------40 V
Contact Plating------Tin
Current Rating-------200 mA
Element Configuration------Dual
Action

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