onsemi BUV21G BJTs
200V 40A NPN BJT Power Transistor, TO-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUV21G
Detailed Description
200V 40A NPN BJT Power Transistor, TO-3
Package
TO-204AE
Lifecycle Status
Active
Datasheet
BUV21G Datasheet
Quick Jump:
Technical Specifications
onsemi BUV21G BJTs technical specifications.
General
Series
SWITCHMODE™
Package / Case
TO-204AE
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
3mA
Dc Current Gain Hfe Min IC Vce
20 @ 12A, 2V
Power Max
250 W
Frequency Transition
8MHz
Transistor Type
NPN
Alternate Parts Comparison (BUV21G vs BUV22G vs BUV48A vs MBT3906DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-204AE | TO-204AE | TO-247 | 6-TSSOP |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Not For New Designs | Production |
| Current Collector IC Max | 40 A | 40 A | 15 A | 200mA |
| Dc Current Gain Hfe Min IC Vce | 20 @ 12A, 2V | 20 @ 10A, 4V | 8 @ 8A, 5V | 100 @ 10mA, 1V |
| Power Max | 250 W | 250 W | 125 W | 150mW |
| Transistor Type | NPN | NPN | NPN | 2 PNP (Dual) |
| Vce Saturation Max Ib IC | 1.5V @ 3A, 25A | 1.5V @ 2.5A, 20A | 5V @ 2.4A, 12A | 400mV @ 5mA, 50mA |
| Voltage Collector Emitter Breakdown Max | 200 V | 250 V | 450 V | 40V |
| Current Collector Cutoff Max | 3mA | 3mA | 200 µA | -- |
| Action |
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