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onsemi 2N5686G BJTs

NPN BJT 80V 50A TO-204 Power Transistor

16,000 ActiveonsemiTO-204AE$24.31
2N5686G TO-204AE package illustration

Same model may have multiple batches, images only for reference.

2N5686G
Manufacturer
Part Number (MPN)
2N5686G
Detailed Description
NPN BJT 80V 50A TO-204 Power Transistor
Package
TO-204AE
Lifecycle Status
Active
Datasheet
PDF 2N5686G Datasheet
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Technical Specifications

onsemi 2N5686G BJTs technical specifications.

General

Package / Case
TO-204AE
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 25A, 2V
Power Max
300 W
Frequency Transition
2MHz
Transistor Type
NPN
Current Collector IC Max
50 A
Voltage Collector Emitter Breakdown Max
80 V

Alternate Parts Comparison (2N5686G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-204AE6-TSSOP6-TSSOPTO-236-3, SC-59, SOT-23-3
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveProductionProductionProduction
Current Collector IC Max50 A200mA100mA100 mA
Dc Current Gain Hfe Min IC Vce15 @ 25A, 2V100 @ 10mA, 1V420 @ 2mA, 5V420 @ 2mA, 5V
Power Max300 W150mW380mW300 mW
Transistor TypeNPN2 PNP (Dual)2 NPN (Dual)NPN
Vce Saturation Max Ib IC5V @ 10A, 50A400mV @ 5mA, 50mA600mV @ 5mA, 100mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max80 V40V45V45 V
Current Collector Cutoff Max1mA--15nA (ICBO)15nA (ICBO)
Number of Pins--663
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