onsemi MJ11032G BJTs
NPN Darlington Transistor 120V 50A 300W TO-204
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJ11032G
Detailed Description
NPN Darlington Transistor 120V 50A 300W TO-204
Package
TO-204AE
Lifecycle Status
Active
Datasheet
MJ11032G Datasheet
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Technical Specifications
onsemi MJ11032G BJTs technical specifications.
General
Package / Case
TO-204AE
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
2mA
Dc Current Gain Hfe Min IC Vce
1000 @ 25A, 5V
Power Max
300 W
Transistor Type
NPN - Darlington
Current Collector IC Max
50 A
Voltage Collector Emitter Breakdown Max
120 V
Alternate Parts Comparison (MJ11032G vs MJD3055T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 |
| RoHS | -- | Compliant |
| Lifecycle Status | Active | Production |
| China ROHS | -- | Non-Compliant |
| Collector Base Voltage Vcbo | -- | 70 V |
| Collector Emitter Breakdown Voltage | -- | 60 V |
| Collector Emitter Saturation Voltage | -- | 1.1 V |
| Collector Emitter Voltage Vceo | -- | 60 V |
| Current Rating | -- | 10 A |
| Element Configuration | -- | Single |
| Emitter Base Voltage Vebo | -- | 5 V |
| Action |
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