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onsemi MJ11032G BJTs

NPN Darlington Transistor 120V 50A 300W TO-204

212 ActiveonsemiTO-204AE$20.92
MJ11032G TO-204AE package illustration

Same model may have multiple batches, images only for reference.

MJ11032G
Manufacturer
Part Number (MPN)
MJ11032G
Detailed Description
NPN Darlington Transistor 120V 50A 300W TO-204
Package
TO-204AE
Lifecycle Status
Active
Datasheet
PDF MJ11032G Datasheet
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Technical Specifications

onsemi MJ11032G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-204AE
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
2mA
Dc Current Gain Hfe Min IC Vce
1000 @ 25A, 5V
Power Max
300 W
Transistor Type
NPN - Darlington
Current Collector IC Max
50 A

Alternate Parts Comparison (MJ11032G vs MJD3055T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate Parts
Package / CaseTO-204AETO-252-3, DPAK
Mounting TypeThrough HoleSurface Mount
Operating Temperature-55°C ~ 200°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesCompliant
Lifecycle StatusActiveProduction
Current Collector Cutoff Max2mA50µA
Current Collector IC Max50 A10 A
Dc Current Gain Hfe Min IC Vce1000 @ 25A, 5V20 @ 4A, 4V
PackageTO-204-2DPAK
PolarityNPNNPN
Power Max300 W1.75 W
Transistor TypeNPN - DarlingtonNPN
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