onsemi KSD363RTU BJTs
Bipolar Transistors - BJT NPN Epitaxial Sil
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSD363RTU
Detailed Description
Bipolar Transistors - BJT NPN Epitaxial Sil
Package
TO-220-3
Lifecycle Status
Active
Datasheet
KSD363RTU Datasheet
Quick Jump:
Technical Specifications
onsemi KSD363RTU BJTs technical specifications.
General
Series
KSD363
RoHS
Yes
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 1A, 5V
Power Max
40 W
Frequency Transition
10MHz
Transistor Type
NPN
Alternate Parts Comparison (KSD363RTU vs KSD560YTU vs MBT3906DW1T1G vs BC847CDW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | 6-TSSOP | 6-TSSOP |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Compliant | Compliant |
| Lifecycle Status | Active | Active | Production | Production |
| Collector Base Voltage Vcbo | 300 V | 150 V | 40 V | 50 V |
| Current Collector IC Max | 6 A | 5 A | 200mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 40 @ 1A, 5V | 5000 @ 3A, 2V | 100 @ 10mA, 1V | 420 @ 2mA, 5V |
| Emitter Base Voltage Vebo | 8 V | 7 V | 5 V | 6 V |
| Package | TO-220-3 | TO-220-3 | SOT-363-6 | SOT-363-6 |
| Power Max | 40 W | 1.5 W | 150mW | 380mW |
| Transistor Type | NPN | NPN - Darlington | 2 PNP (Dual) | 2 NPN (Dual) |
| Action |
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