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onsemi MJE15034G BJTs

NPN BJT 350V 4A TO-220 Transistor

2,147 ActiveonsemiTO-220-3$1.96
MJE15034G - No Image Available

Same model may have multiple batches, images only for reference.

MJE15034G
Manufacturer
Part Number (MPN)
MJE15034G
Detailed Description
NPN BJT 350V 4A TO-220 Transistor
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF MJE15034G Datasheet
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Technical Specifications

onsemi MJE15034G BJTs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
10 @ 2A, 5V
Power Max
2 W
Frequency Transition
30MHz
Transistor Type
NPN
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
350 V

Alternate Parts Comparison (MJE15034G vs MJE15030G vs MJE15032G vs KSC2334YTU)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max10µA (ICBO)100µA10µA (ICBO)10µA (ICBO)
Current Collector IC Max4 A8 A8 A7 A
Dc Current Gain Hfe Min IC Vce10 @ 2A, 5V20 @ 4A, 2V10 @ 2A, 5V120 @ 3A, 5V
DescriptionTRANS NPN 350V 4A TO-220TRANS NPN 150V 8A TO-220TRANS NPN 250V 8A TO-220TRANS NPN 100V 7A TO-220-3
Detailed DescriptionBipolar (BJT) Transistor NPN 350 V 4 A 30MHz 2 W Through Hole TO-220Bipolar (BJT) Transistor NPN 150 V 8 A 30MHz 50 W Through Hole TO-220Bipolar (BJT) Transistor NPN 250 V 8 A 30MHz 50 W Through Hole TO-220Bipolar (BJT) Transistor NPN 100 V 7 A 1.5 W Through Hole TO-220-3
Power Max2 W50 W50 W1.5 W
Transistor TypeNPNNPNNPNNPN
Vce Saturation Max Ib IC500mV @ 100mA, 1A500mV @ 100mA, 1A500mV @ 100mA, 1A600mV @ 500mA, 5A
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