onsemi KSD560YTU MOSFETs
Darlington Transistors NPN Epitaxial Sil Darl
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSD560YTU
Detailed Description
Darlington Transistors NPN Epitaxial Sil Darl
Package
TO-220-3
Lifecycle Status
Active
Datasheet
KSD560YTU Datasheet
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Technical Specifications
onsemi KSD560YTU MOSFETs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN DARL 100V 5A TO-220-3
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 5 A 1.5 W Through Hole TO-220-3
Current Collector Cutoff Max
1µA (ICBO)
Dc Current Gain Hfe Min IC Vce
5000 @ 3A, 2V
Power Max
1.5 W
Transistor Type
NPN - Darlington
Alternate Parts Comparison (KSD560YTU vs FDP085N10A-F102 vs FCP104N60F vs FCP130N60)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Description | TRANS NPN DARL 100V 5A TO-220-3 | MOSFET N-CH 100V 96A TO220-3 | MOSFET N-CH 600V 37A TO220-3 | MOSFET N-CH 600V 28A TO220-3 |
| Detailed Description | Bipolar (BJT) Transistor NPN - Darlington 100 V 5 A 1.5 W Through Hole TO-220-3 | N-Channel 100 V 96A (Tc) 188W (Tc) Through Hole TO-220-3 | N-Channel 600 V 37A (Tc) 357W (Tc) Through Hole TO-220-3 | N-Channel 600 V 28A (Tc) 278W (Tc) Through Hole TO-220-3 |
| Series | -- | PowerTrench® | HiPerFET™, Polar™ | SuperFET® II |
| Current Continuous Drain ID 25 C | -- | 96A (Tc) | 37A (Tc) | 28A (Tc) |
| Drain to Source Voltage Vdss | -- | 100 V | 600 V | 600 V |
| Drive Voltage Max Rds on Min Rds on | -- | 10V | 10V | 10V |
| Fet Type | -- | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | -- | 40 nC @ 10 V | 145 nC @ 10 V | 70 nC @ 10 V |
| Action |
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