onsemi FJP13007H1TU BJTs
NPN BJT Transistor | 400V VCEO | 8A IC | TO-220 | 4MHz
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FJP13007H1TU
Detailed Description
NPN BJT Transistor | 400V VCEO | 8A IC | TO-220 | 4MHz
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
FJP13007H1TU Datasheet
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Technical Specifications
onsemi FJP13007H1TU BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
15 @ 2A, 5V
Power Max
80 W
Frequency Transition
4MHz
Transistor Type
NPN
Current Collector IC Max
8 A
Voltage Collector Emitter Breakdown Max
400 V
Alternate Parts Comparison (FJP13007H1TU vs FJP13009TU vs FJP13009H2TU vs MBT3906DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | -- | 6 |
| RoHS | -- | -- | -- | Compliant |
| Lifecycle Status | Obsolete | Active | Active | Active |
| China ROHS | -- | -- | -- | Compliant |
| Collector Base Voltage Vcbo | -- | -- | -- | 40 V |
| Collector Emitter Breakdown Voltage | -- | -- | -- | 40 V |
| Collector Emitter Saturation Voltage | -- | -- | -- | -400 mV |
| Collector Emitter Voltage Vceo | -- | -- | -- | 40 V |
| Contact Plating | -- | -- | -- | Tin |
| Current Rating | -- | -- | -- | -200 mA |
| Element Configuration | -- | -- | -- | Dual |
| Action |
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