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onsemi FJP13009TU BJTs

Bipolar Transistors - BJT NPN Sil Transistor

90,000 ActiveonsemiTO-220-3$1.20
FJP13009TU TO-220-3 package illustration

Same model may have multiple batches, images only for reference.

FJP13009TU
Manufacturer
Part Number (MPN)
FJP13009TU
Detailed Description
Bipolar Transistors - BJT NPN Sil Transistor
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF FJP13009TU Datasheet
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Technical Specifications

onsemi FJP13009TU BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
8 @ 5A, 5V
Power Max
100 W
Frequency Transition
4MHz
Transistor Type
NPN
Current Collector IC Max
12 A

Alternate Parts Comparison (FJP13009TU vs FJP13009H2TU vs FJP13007H1TU vs MBT3906DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-36-TSSOP
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesYesYesCompliant
Lifecycle StatusActiveActiveObsoleteProduction
Current Collector IC Max12 A12 A8 A200mA
Dc Current Gain Hfe Min IC Vce8 @ 5A, 5V15 @ 5A, 5V15 @ 2A, 5V100 @ 10mA, 1V
PackageTO-220-3TO-220-3TO-220-3SOT-363-6
Power Max100 W100 W80 W150mW
Transistor TypeNPNNPNNPN2 PNP (Dual)
Vce Saturation Max Ib IC3V @ 3A, 12A3V @ 3A, 12A3V @ 2A, 8A400mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max400 V400 V400 V40V
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