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onsemi FJP13009TU BJTs

Bipolar Transistors - BJT NPN Sil Transistor

90,000 ActiveonsemiTO-220-3$1.20
FJP13009TU - No Image Available

Same model may have multiple batches, images only for reference.

FJP13009TU
Manufacturer
Part Number (MPN)
FJP13009TU
Detailed Description
Bipolar Transistors - BJT NPN Sil Transistor
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF FJP13009TU Datasheet
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Technical Specifications

onsemi FJP13009TU BJTs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
8 @ 5A, 5V
Power Max
100 W
Frequency Transition
4MHz
Transistor Type
NPN
Current Collector IC Max
12 A
Voltage Collector Emitter Breakdown Max
400 V

Alternate Parts Comparison (FJP13009TU vs FJP13009H2TU vs FJP13007H1TU vs MBT3906DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins------6
RoHS------Compliant
Lifecycle StatusActiveActiveObsoleteActive
China ROHS------Compliant
Collector Base Voltage Vcbo------40 V
Collector Emitter Breakdown Voltage------40 V
Collector Emitter Saturation Voltage-------400 mV
Collector Emitter Voltage Vceo------40 V
Contact Plating------Tin
Current Rating-------200 mA
Element Configuration------Dual
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