onsemi FSB660A BJTs
Bipolar Transistors - BJT PNP Transistor Low Saturation
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FSB660A
Detailed Description
Bipolar Transistors - BJT PNP Transistor Low Saturation
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
FSB660A Datasheet
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Technical Specifications
onsemi FSB660A BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
250 @ 500mA, 2V
Power Max
500 mW
Frequency Transition
75MHz
Transistor Type
PNP
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
60 V
Alternate Parts Comparison (FSB660A vs FSB127AHN vs FSB117HNY vs FSB117HNY-F116)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Lifecycle Status | Active | Obsolete | Obsolete | Obsolete |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 8-DIP | 8-DIP | -- |
| Operating Temperature | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 105°C | -- |
| Mounting Type | Surface Mount | Through Hole | -- | -- |
| Current Collector Cutoff Max | 100nA (ICBO) | -- | -- | -- |
| Current Collector IC Max | 2 A | -- | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 250 @ 500mA, 2V | -- | -- | -- |
| Frequency Transition | 75MHz | -- | -- | -- |
| Power Max | 500 mW | -- | -- | -- |
| Transistor Type | PNP | -- | -- | -- |
| Vce Saturation Max Ib IC | 300mV @ 200mA, 2A | -- | -- | -- |
| Voltage Collector Emitter Breakdown Max | 60 V | -- | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
This part is listed as a cross for
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PNP bipolar junction transistor (BJT) for surface mount applications.
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