onsemi BSS63LT1G BJTs
PNP BJT Transistor, 100V VCEO, 100mA IC, 95MHz, SOT-23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS63LT1G
Detailed Description
PNP BJT Transistor, 100V VCEO, 100mA IC, 95MHz, SOT-23
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
BSS63LT1G Datasheet
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Technical Specifications
onsemi BSS63LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 25mA, 1V
Power Max
225 mW
Frequency Transition
95MHz
Transistor Type
PNP
Current Collector IC Max
100 mA
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (BSS63LT1G vs SMMBFJ175LT1G vs NSVMMUN2112LT1G vs NSVMMUN2135LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Power Max | 225 mW | 225 mW | 246 mW | 246 mW |
| Current Collector Cutoff Max | 100nA (ICBO) | -- | 500nA | 500nA |
| Current Collector IC Max | 100 mA | -- | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 30 @ 25mA, 1V | -- | 60 @ 5mA, 10V | 80 @ 5mA, 10V |
| Transistor Type | PNP | -- | PNP - Pre-Biased | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 250mV @ 2.5mA, 25mA | -- | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 100 V | -- | 50 V | 50 V |
| Grade | -- | Automotive | Automotive | Automotive |
| Qualification | -- | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Action |
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