onsemi BSP52T1G BJTs
NPN Darlington Transistor 80V 1A SOT-223
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSP52T1G
Base Model
Detailed Description
NPN Darlington Transistor 80V 1A SOT-223
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
BSP52T1G Datasheet
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Technical Specifications
onsemi BSP52T1G BJTs technical specifications.
General
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
10µA
Dc Current Gain Hfe Min IC Vce
2000 @ 500mA, 10V
Power Max
800 mW
Transistor Type
NPN - Darlington
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
80 V
Alternate Parts Comparison (BSP52T1G vs BSP52T3G vs BSP16T1G vs MBT3906DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -- | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | -- | 6 |
| RoHS | -- | -- | -- | Compliant |
| Lifecycle Status | Active | -- | Active | Active |
| China ROHS | -- | -- | -- | Compliant |
| Collector Base Voltage Vcbo | -- | -- | -- | 40 V |
| Collector Emitter Breakdown Voltage | -- | -- | -- | 40 V |
| Collector Emitter Saturation Voltage | -- | -- | -- | -400 mV |
| Collector Emitter Voltage Vceo | -- | -- | -- | 40 V |
| Contact Plating | -- | -- | -- | Tin |
| Current Rating | -- | -- | -- | -200 mA |
| Element Configuration | -- | -- | -- | Dual |
| Action |
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