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onsemi BSP16T1G BJTs

PNP BJT Transistor, 300V VCEO, 1A IC, SOT-223

216,000 ActiveonsemiSOT-223$0.24
BSP16T1G SOT-223 package illustration

Same model may have multiple batches, images only for reference.

BSP16T1G
Manufacturer
Part Number (MPN)
BSP16T1G
Detailed Description
PNP BJT Transistor, 300V VCEO, 1A IC, SOT-223
Package
SOT-223
Lifecycle Status
Active
Datasheet
PDF BSP16T1G Datasheet
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Technical Specifications

onsemi BSP16T1G BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 10V
Power Max
1.5 W
Frequency Transition
15MHz
Transistor Type
PNP
Current Collector IC Max
100 mA
Voltage Collector Emitter Breakdown Max
300 V

Alternate Parts Comparison (BSP16T1G vs BSP52T1G vs BSP52T3G vs MBT3906DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA6-TSSOP
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveProduction
Current Collector IC Max100 mA1 A1 A200mA
Dc Current Gain Hfe Min IC Vce30 @ 50mA, 10V2000 @ 500mA, 10V2000 @ 500mA, 10V100 @ 10mA, 1V
Power Max1.5 W800 mW800 mW150mW
Transistor TypePNPNPN - DarlingtonNPN - Darlington2 PNP (Dual)
Vce Saturation Max Ib IC2V @ 5mA, 50mA1.3V @ 500µA, 500mA1.3V @ 500µA, 500mA400mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max300 V80 V80 V40V
Current Collector Cutoff Max50µA10µA10µA--
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Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

This part is listed as a cross for

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