onsemi PZT751T1G BJTs
PNP BJT Transistor, 60V, 2A, 75MHz, SOT-223
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PZT751T1G
Detailed Description
PNP BJT Transistor, 60V, 2A, 75MHz, SOT-223
Package
SOT-223
Lifecycle Status
Active
Datasheet
PZT751T1G Datasheet
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Technical Specifications
onsemi PZT751T1G BJTs technical specifications.
General
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
75 @ 1A, 2V
Power Max
800 mW
Frequency Transition
75MHz
Transistor Type
PNP
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
60 V
Alternate Parts Comparison (PZT751T1G vs PZT2222AT3G vs NJT4030PT3G vs SBCP53T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Production | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 10nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 2 A | 600 mA | 3 A | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 75 @ 1A, 2V | 100 @ 150mA, 10V | 200 @ 1A, 1V | 40 @ 150mA, 2V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 800 mW | 1.5 W | 2 W | 1.5 W |
| Transistor Type | PNP | NPN | PNP | PNP |
| Vce Saturation Max Ib IC | 500mV @ 200mA, 2A | 1V @ 50mA, 500mA | 500mV @ 300mA, 3A | 500mV @ 50mA, 500mA |
| Action |
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