onsemi NSS1C200MZ4T3G BJTs
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSS1C200MZ4T3G
Detailed Description
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Package
SOT-223
Lifecycle Status
Active
Datasheet
NSS1C200MZ4T3G Datasheet
Quick Jump:
Technical Specifications
onsemi NSS1C200MZ4T3G BJTs technical specifications.
General
Series
NSS1C200
RoHS
Yes
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 500mA, 2V
Power Max
800 mW
Frequency Transition
120MHz
Transistor Type
PNP
Alternate Parts Comparison (NSS1C200MZ4T3G vs NSS40300MZ4T3G vs NSS40301MZ4T3G vs NJT4030PT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Production |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 2 A | 3 A | 3 A | 3 A |
| Dc Current Gain Hfe Min IC Vce | 120 @ 500mA, 2V | 175 @ 1A, 1V | 200 @ 1A, 1V | 200 @ 1A, 1V |
| Power Max | 800 mW | 2 W | 2 W | 2 W |
| Transistor Type | PNP | PNP | NPN | PNP |
| Vce Saturation Max Ib IC | 220mV @ 200mA, 2A | 400mV @ 300mA, 3A | 200mV @ 300mA, 3A | 500mV @ 300mA, 3A |
| Voltage Collector Emitter Breakdown Max | 100 V | 40 V | 40 V | 40 V |
| RoHS | Yes | Yes | -- | Compliant |
| Action |
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