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onsemi NSS1C200MZ4T3G BJTs

Low VCE(sat) Transistor, PNP, 100 V, 2.0 A, SOT-223 (TO-261) 4 LEAD, 4000-REEL

144,000 ActiveonsemiSOT-223$0.39
NSS1C200MZ4T3G - No Image Available

Same model may have multiple batches, images only for reference.

NSS1C200MZ4T3G
Manufacturer
Part Number (MPN)
NSS1C200MZ4T3G
Detailed Description
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Package
SOT-223
Lifecycle Status
Active
Datasheet
PDF NSS1C200MZ4T3G Datasheet
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Technical Specifications

onsemi NSS1C200MZ4T3G BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 500mA, 2V
Power Max
800 mW
Frequency Transition
120MHz
Transistor Type
PNP
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
100 V

Alternate Parts Comparison (NSS1C200MZ4T3G vs NSS40300MZ4T3G vs NSS40301MZ4T3G vs NJT4030PT3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA (ICBO)100nA (ICBO)100nA (ICBO)100nA (ICBO)
Current Collector IC Max2 A3 A3 A3 A
Dc Current Gain Hfe Min IC Vce120 @ 500mA, 2V175 @ 1A, 1V200 @ 1A, 1V200 @ 1A, 1V
DescriptionTRANS PNP 100V 2A SOT223TRANS PNP 40V 3A SOT223TRANS NPN 40V 3A SOT223TRANS PNP 40V 3A SOT223
Detailed DescriptionBipolar (BJT) Transistor PNP 100 V 2 A 120MHz 800 mW Surface Mount SOT-223 (TO-261)Bipolar (BJT) Transistor PNP 40 V 3 A 160MHz 2 W Surface Mount SOT-223 (TO-261)Bipolar (BJT) Transistor NPN 40 V 3 A 215MHz 2 W Surface Mount SOT-223 (TO-261)Bipolar (BJT) Transistor PNP 40 V 3 A 160MHz 2 W Surface Mount SOT-223 (TO-261)
Power Max800 mW2 W2 W2 W
Transistor TypePNPPNPNPNPNP
Vce Saturation Max Ib IC220mV @ 200mA, 2A400mV @ 300mA, 3A200mV @ 300mA, 3A500mV @ 300mA, 3A
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