onsemi BCP56T3G BJTs
NPN BJT 80V 1A 130MHz SOT-223 Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BCP56T3G
Base Model
Detailed Description
NPN BJT 80V 1A 130MHz SOT-223 Transistor
Package
SOT-223
Lifecycle Status
Active
Datasheet
BCP56T3G Datasheet
Quick Jump:
Technical Specifications
onsemi BCP56T3G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 150mA, 2V
Power Max
1.5 W
Frequency Transition
130MHz
Transistor Type
NPN
Current Collector IC Max
1 A
Alternate Parts Comparison (BCP56T3G vs BCP56T1G vs NJT4030PT3G vs SBCP53T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Production | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 1 A | 1 A | 3 A | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 150mA, 2V | 40 @ 150mA, 2V | 200 @ 1A, 1V | 40 @ 150mA, 2V |
| Power Max | 1.5 W | 1.5 W | 2 W | 1.5 W |
| Transistor Type | NPN | NPN | PNP | PNP |
| Vce Saturation Max Ib IC | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 500mV @ 300mA, 3A | 500mV @ 50mA, 500mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 40 V | 80 V |
| RoHS | Yes | Yes | Compliant | -- |
| Action |
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