onsemi BD439G BJTs
Medium Power NPN Bipolar Power Transistor, TO-225, 500-BLKBX
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD439G
Detailed Description
Medium Power NPN Bipolar Power Transistor, TO-225, 500-BLKBX
Package
TO-225
Lifecycle Status
Active
Datasheet
BD439G Datasheet
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Technical Specifications
onsemi BD439G BJTs technical specifications.
General
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 500mA, 1V
Power Max
36 W
Frequency Transition
3MHz
Transistor Type
NPN
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
60 V
Alternate Parts Comparison (BD439G vs BD140G vs BD682G vs BD136G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100µA (ICBO) | 100nA (ICBO) | 500µA | 100nA (ICBO) |
| Current Collector IC Max | 4 A | 1.5 A | 4 A | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 500mA, 1V | 40 @ 150mA, 2V | 750 @ 1.5A, 3V | 40 @ 150mA, 2V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 36 W | 1.25 W | 40 W | 1.25 W |
| Transistor Type | NPN | PNP | PNP - Darlington | PNP |
| Vce Saturation Max Ib IC | 800mV @ 300mA, 3A | 500mV @ 50mA, 500mA | 2.5V @ 30mA, 1.5A | 500mV @ 50mA, 500mA |
| Action |
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