onsemi BD682G BJTs
PNP Darlington Transistor 100V 4A 40W TO-225
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD682G
Detailed Description
PNP Darlington Transistor 100V 4A 40W TO-225
Package
TO-225
Lifecycle Status
Active
Datasheet
BD682G Datasheet
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Technical Specifications
onsemi BD682G BJTs technical specifications.
General
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
500µA
Dc Current Gain Hfe Min IC Vce
750 @ 1.5A, 3V
Power Max
40 W
Transistor Type
PNP - Darlington
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (BD682G vs BD439G vs BD787G vs BD237G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500µA | 100µA (ICBO) | 100µA | 100µA (ICBO) |
| Current Collector IC Max | 4 A | 4 A | 4 A | 2 A |
| Dc Current Gain Hfe Min IC Vce | 750 @ 1.5A, 3V | 40 @ 500mA, 1V | 40 @ 200mA, 3V | 25 @ 1A, 2V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 40 W | 36 W | 15 W | 25 W |
| Transistor Type | PNP - Darlington | NPN | NPN | NPN |
| Vce Saturation Max Ib IC | 2.5V @ 30mA, 1.5A | 800mV @ 300mA, 3A | 2.5V @ 800mA, 4A | 600mV @ 100mA, 1A |
| Action |
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