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onsemi BD787G BJTs

60V 4A NPN BJT Power Transistor TO-225 50MHz

90,000 ActiveonsemiTO-225$0.56
BD787G - No Image Available

Same model may have multiple batches, images only for reference.

BD787G
Manufacturer
Part Number (MPN)
BD787G
Detailed Description
60V 4A NPN BJT Power Transistor TO-225 50MHz
Package
TO-225
Lifecycle Status
Active
Datasheet
PDF BD787G Datasheet
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Technical Specifications

onsemi BD787G BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 200mA, 3V
Power Max
15 W
Frequency Transition
50MHz
Transistor Type
NPN
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
60 V

Alternate Parts Comparison (BD787G vs BD140G vs BD682G vs BD136G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100µA100nA (ICBO)500µA100nA (ICBO)
Current Collector IC Max4 A1.5 A4 A1.5 A
Dc Current Gain Hfe Min IC Vce40 @ 200mA, 3V40 @ 150mA, 2V750 @ 1.5A, 3V40 @ 150mA, 2V
Description--------
Detailed Description--------
Power Max15 W1.25 W40 W1.25 W
Transistor TypeNPNPNPPNP - DarlingtonPNP
Vce Saturation Max Ib IC2.5V @ 800mA, 4A500mV @ 50mA, 500mA2.5V @ 30mA, 1.5A500mV @ 50mA, 500mA
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