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onsemi BCW68GLT3G BJTs

PNP BJT Transistor, 45V VCEO, 800mA Ic, 100MHz, SOT-23-3

30,000 ActiveonsemiBCW68GLTTO-236-3, SC-59, SOT-23-3$0.04
BCW68GLT3G - No Image Available

Same model may have multiple batches, images only for reference.

BCW68GLT3G
Manufacturer
Part Number (MPN)
BCW68GLT3G
Base Model
Detailed Description
PNP BJT Transistor, 45V VCEO, 800mA Ic, 100MHz, SOT-23-3
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF BCW68GLT3G Datasheet
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Ordering Code Family

BCW68GLT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi BCW68GLT3G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 10mA, 1V
Power Max
225 mW
Frequency Transition
100MHz
Transistor Type
PNP
Current Collector IC Max
800 mA
Voltage Collector Emitter Breakdown Max
45 V

Alternate Parts Comparison (BCW68GLT3G vs BCW68GLT1G vs SMMBFJ175LT1G vs NSVMMUN2112LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS PNP 45V 0.8A SOT23-3TRANS PNP 45V 0.8A SOT23-3JFET P-CH 30V SOT23-3TRANS PREBIAS PNP 50V SOT23-3
Detailed DescriptionBipolar (BJT) Transistor PNP 45 V 800 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor PNP 45 V 800 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW225 mW225 mW246 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
Current Collector Cutoff Max20nA20nA--500nA
Current Collector IC Max800 mA800 mA--100 mA
Dc Current Gain Hfe Min IC Vce120 @ 10mA, 1V120 @ 10mA, 1V--60 @ 5mA, 10V
Transistor TypePNPPNP--PNP - Pre-Biased
Vce Saturation Max Ib IC1.5V @ 30mA, 300mA1.5V @ 30mA, 300mA--250mV @ 300µA, 10mA
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