onsemi BCW65CLT1G BJTs
NPN BJT 32V 800mA 100MHz SOT-23 Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BCW65CLT1G
Detailed Description
NPN BJT 32V 800mA 100MHz SOT-23 Transistor
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
BCW65CLT1G Datasheet
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Technical Specifications
onsemi BCW65CLT1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
250 @ 100mA, 1V
Power Max
225 mW
Frequency Transition
100MHz
Transistor Type
NPN
Current Collector IC Max
800 mA
Related Parts Comparison (BCW65CLT1G vs SMMBFJ175LT1G vs NSVMMUN2112LT1G vs NSVMMUN2230LT1G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Power Max | 225 mW | 225 mW | 246 mW | 246 mW |
| RoHS | Yes | -- | Yes | Yes |
| Current Collector Cutoff Max | 20nA | -- | 500nA | 500nA |
| Current Collector IC Max | 800 mA | -- | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 250 @ 100mA, 1V | -- | 60 @ 5mA, 10V | 3 @ 5mA, 10V |
| Package | SOT23-3 | -- | SOT23-3 | SOT23-3 |
| Transistor Type | NPN | -- | PNP - Pre-Biased | NPN - Pre-Biased |
| Vce Saturation Max Ib IC | 700mV @ 50mA, 500mA | -- | 250mV @ 300µA, 10mA | 250mV @ 5mA, 10mA |
| Voltage Collector Emitter Breakdown Max | 32 V | -- | 50 V | 50 V |
| Action |
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