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onsemi BCP56MTWG RF BJT

Source Category: Discrete Semiconductors > Transistors > RF BJT | Import Source: octopart_rf_bjt_html

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BCP56MTWG
Manufacturer
Part Number (MPN)
BCP56MTWG
Detailed Description
BCP56MTWG General Purpose Transistor Medium Power, NPN 80 V, 1 A BJT - NPN, 80V, 1A
Lifecycle Status
Active
Datasheet
PDF BCP56MTWG Datasheet
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Alternate Parts Comparison (BCP56MTWG vs BCP5316MTWG vs BCP53MTWG vs BCP5616MTWG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case--3-WDFN Exposed Pad3-WDFN Exposed Pad3-WDFN Exposed Pad
Mounting Type--Surface Mount, Wettable FlankSurface Mount, Wettable FlankSurface Mount, Wettable Flank
Operating Temperature---65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle Status--ActiveActiveActive
Current Collector Cutoff Max--100nA (ICBO)100nA (ICBO)100nA (ICBO)
Current Collector IC Max--1 A1 A1 A
Dc Current Gain Hfe Min IC Vce--100 @ 150mA, 2V63 @ 150mA, 2V100 @ 150mA, 2V
Description--TRANS PNP 80V 1A 3WDFNWTRANS PNP 80V 1A 3WDFNWTRANS NPN 80V 1A 3WDFNW
Detailed Description--Bipolar (BJT) Transistor PNP 80 V 1 A 130MHz 875 mW Surface Mount, Wettable Flank 3-WDFNW (2x2)Bipolar (BJT) Transistor PNP 80 V 1 A 130MHz 875 mW Surface Mount, Wettable Flank 3-WDFNW (2x2)Bipolar (BJT) Transistor NPN 80 V 1 A 140MHz 1.5 W Surface Mount, Wettable Flank 3-WDFNW (2x2)
Frequency Transition--130MHz130MHz140MHz
Power Max--875 mW875 mW1.5 W
Transistor Type--PNPPNPNPN
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