onsemi BCP5316MTWG RF BJT
BCP5316MTWG General Purpose Transistor Medium Power, PNP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BCP5316MTWG
Detailed Description
BCP5316MTWG General Purpose Transistor Medium Power, PNP
Package
3-WDFN Exposed Pad
Lifecycle Status
Active
Datasheet
BCP5316MTWG Datasheet
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Technical Specifications
onsemi BCP5316MTWG RF BJT technical specifications.
General
Package / Case
3-WDFN Exposed Pad
Mounting Type
Surface Mount, Wettable Flank
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 2V
Power Max
875 mW
Frequency Transition
130MHz
Transistor Type
PNP
Current Collector IC Max
1 A
Related Parts Comparison (BCP5316MTWG vs BCP53MTWG vs BCP5616MTWG vs BCP5310MTWG)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 1 A | 1 A | 1 A | 1 A |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 2V | 63 @ 150mA, 2V | 100 @ 150mA, 2V | 63 @ 150mA, 2V |
| Frequency Transition | 130MHz | 130MHz | 140MHz | 130MHz |
| Power Max | 875 mW | 875 mW | 1.5 W | 875 mW |
| Transistor Type | PNP | PNP | NPN | PNP |
| Vce Saturation Max Ib IC | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 80 V | 80 V |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
BCP5616MTWGonsemiBCP5616MTWG General Purpose Transistor Medium Power, NPN 80 V, 1 A BJT - NPN, 80V, 1A
BCP5610MTWGonsemiBCP5610MTWG General Purpose Transistor Medium Power, NPN 80 V, 1 A BJT - NPN, 80V, 1A
