onsemi BCP5610MTWG RF BJT
Source Category: Discrete Semiconductors > Transistors > RF BJT | Import Source: octopart_rf_bjt_html
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BCP5610MTWG
Detailed Description
BCP5610MTWG General Purpose Transistor Medium Power, NPN 80 V, 1 A BJT - NPN, 80V, 1A
Package
3-WDFN Exposed Pad
Lifecycle Status
Active
Datasheet
BCP5610MTWG Datasheet
Quick Jump:
Technical Specifications
onsemi BCP5610MTWG RF BJT technical specifications.
General
Package / Case
3-WDFN Exposed Pad
Mounting Type
Surface Mount, Wettable Flank
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
63 @ 150mA, 2V
Power Max
1.5 W
Frequency Transition
140MHz
Transistor Type
NPN
Current Collector IC Max
1 A
Alternate Parts Comparison (BCP5610MTWG vs BCP5316MTWG vs BCP53MTWG vs BCP5616MTWG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 1 A | 1 A | 1 A | 1 A |
| Dc Current Gain Hfe Min IC Vce | 63 @ 150mA, 2V | 100 @ 150mA, 2V | 63 @ 150mA, 2V | 100 @ 150mA, 2V |
| Description | TRANS NPN 80V 1A 3WDFNW | TRANS PNP 80V 1A 3WDFNW | TRANS PNP 80V 1A 3WDFNW | TRANS NPN 80V 1A 3WDFNW |
| Detailed Description | Bipolar (BJT) Transistor NPN 80 V 1 A 140MHz 1.5 W Surface Mount, Wettable Flank 3-WDFNW (2x2) | Bipolar (BJT) Transistor PNP 80 V 1 A 130MHz 875 mW Surface Mount, Wettable Flank 3-WDFNW (2x2) | Bipolar (BJT) Transistor PNP 80 V 1 A 130MHz 875 mW Surface Mount, Wettable Flank 3-WDFNW (2x2) | Bipolar (BJT) Transistor NPN 80 V 1 A 140MHz 1.5 W Surface Mount, Wettable Flank 3-WDFNW (2x2) |
| Frequency Transition | 140MHz | 130MHz | 130MHz | 140MHz |
| Power Max | 1.5 W | 875 mW | 875 mW | 1.5 W |
| Transistor Type | NPN | PNP | PNP | NPN |
| Action |
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