onsemi BCP5310MTWG RF BJT
BCP5310MTWG General Purpose Transistor Medium Power, PNP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BCP5310MTWG
Detailed Description
BCP5310MTWG General Purpose Transistor Medium Power, PNP
Package
3-WDFN Exposed Pad
Lifecycle Status
Active
Datasheet
BCP5310MTWG Datasheet
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Technical Specifications
onsemi BCP5310MTWG RF BJT technical specifications.
General
Package / Case
3-WDFN Exposed Pad
Mounting Type
Surface Mount, Wettable Flank
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
63 @ 150mA, 2V
Power Max
875 mW
Frequency Transition
130MHz
Transistor Type
PNP
Current Collector IC Max
1 A
Alternate Parts Comparison (BCP5310MTWG vs BCP5316MTWG vs BCP53MTWG vs BCP5616MTWG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad | 3-WDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank | Surface Mount, Wettable Flank |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 1 A | 1 A | 1 A | 1 A |
| Dc Current Gain Hfe Min IC Vce | 63 @ 150mA, 2V | 100 @ 150mA, 2V | 63 @ 150mA, 2V | 100 @ 150mA, 2V |
| Description | TRANS PNP 80V 1A 3WDFNW | TRANS PNP 80V 1A 3WDFNW | TRANS PNP 80V 1A 3WDFNW | TRANS NPN 80V 1A 3WDFNW |
| Detailed Description | Bipolar (BJT) Transistor PNP 80 V 1 A 130MHz 875 mW Surface Mount, Wettable Flank 3-WDFNW (2x2) | Bipolar (BJT) Transistor PNP 80 V 1 A 130MHz 875 mW Surface Mount, Wettable Flank 3-WDFNW (2x2) | Bipolar (BJT) Transistor PNP 80 V 1 A 130MHz 875 mW Surface Mount, Wettable Flank 3-WDFNW (2x2) | Bipolar (BJT) Transistor NPN 80 V 1 A 140MHz 1.5 W Surface Mount, Wettable Flank 3-WDFNW (2x2) |
| Frequency Transition | 130MHz | 130MHz | 130MHz | 140MHz |
| Power Max | 875 mW | 875 mW | 875 mW | 1.5 W |
| Transistor Type | PNP | PNP | PNP | NPN |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
BCP5616MTWGonsemiBCP5616MTWG General Purpose Transistor Medium Power, NPN 80 V, 1 A BJT - NPN, 80V, 1A
BCP5610MTWGonsemiBCP5610MTWG General Purpose Transistor Medium Power, NPN 80 V, 1 A BJT - NPN, 80V, 1A