onsemi BCP5310MTWG RF BJT

Name: BCP5310MTWG
Brand: onsemi
SKU: BCP5310MTWG

BCP5310MTWG General Purpose Transistor Medium Power, PNP

In Stock Activeonsemi3-WDFN Exposed Pad

Same model may have multiple batches, images only for reference.

BCP5310MTWG

Manufacturer

onsemi

Part Number (MPN)

BCP5310MTWG

Technical Specifications

onsemi BCP5310MTWG RF BJT technical specifications.

General

Package / Case

3-WDFN Exposed Pad

Mounting Type

Surface Mount, Wettable Flank

Operating Temperature

-65°C ~ 150°C (TJ)

Lifecycle Status

Active

Current Collector Cutoff Max

100nA (ICBO)

Dc Current Gain Hfe Min IC Vce

63 @ 150mA, 2V

Power Max

875 mW

Frequency Transition

130MHz

Transistor Type

PNP

Current Collector IC Max

1 A

Alternate Parts Comparison (BCP5310MTWG vs BCP5316MTWG vs BCP53MTWG vs BCP5616MTWG)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	onsemiBCP5310MTWG	onsemiBCP5316MTWG	onsemiBCP53MTWG	onsemiBCP5616MTWG
Package / Case	3-WDFN Exposed Pad	3-WDFN Exposed Pad	3-WDFN Exposed Pad	3-WDFN Exposed Pad
Mounting Type	Surface Mount, Wettable Flank	Surface Mount, Wettable Flank	Surface Mount, Wettable Flank	Surface Mount, Wettable Flank
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Lifecycle Status	Active	Active	Active	Active
Current Collector Cutoff Max	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
Current Collector IC Max	1 A	1 A	1 A	1 A
Dc Current Gain Hfe Min IC Vce	63 @ 150mA, 2V	100 @ 150mA, 2V	63 @ 150mA, 2V	100 @ 150mA, 2V
Frequency Transition	130MHz	130MHz	130MHz	140MHz
Power Max	875 mW	875 mW	875 mW	1.5 W
Transistor Type	PNP	PNP	PNP	NPN
Vce Saturation Max Ib IC	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Voltage Collector Emitter Breakdown Max	80 V	80 V	80 V	80 V
Action	RFQ	RFQ	RFQ	RFQ

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