onsemi BC856BWT1G BJTs
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 150 mW, SC-70, Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC856BWT1G
Detailed Description
Reliable BJTs by onsemi, engineered for high-performance systems.
Package
SC
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
BC856BWT1G Datasheet
Quick Jump:
Technical Specifications
onsemi BC856BWT1G BJTs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Packaging
Tape and Reel
Operating Temperature
-55 °C ~ 150 °C
Lifecycle Status
Production
Manufacturer Lifecycle Status
ACTIVE
Package
SC
Contact Plating
Tin
Collector Base Voltage Vcbo
80 V
Collector Emitter Breakdown Voltage
65 V
Alternate Parts Comparison (BC856BWT1G vs BC846BLT3G vs BC807-16LT1G vs BC849CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55 °C ~ 150 °C | -- | -55 °C ~ 150 °C | -55 °C ~ 150 °C |
| Number of Pins | 3 | -- | 3 | 3 |
| RoHS | Compliant | -- | Compliant | Compliant |
| Lifecycle Status | Production | -- | Production | Production |
| China ROHS | Compliant | -- | Compliant | Compliant |
| Collector Base Voltage Vcbo | 80 V | -- | 50 V | 30 V |
| Collector Emitter Breakdown Voltage | 65 V | -- | 45 V | 30 V |
| Collector Emitter Saturation Voltage | 650 mV | -- | 700 mV | 600 mV |
| Collector Emitter Voltage Vceo | 65 V | -- | 45 V | 30 V |
| Element Configuration | Single | -- | Single | Single |
| Emitter Base Voltage Vebo | 5 V | -- | 5 V | 5 V |
| Gain Bandwidth | 100 MHz | -- | 100 MHz | 100 MHz |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
