NXP Semiconductors PSMN2R2-30YLC,115 MOSFETs
MOSFET N-CH 30V 100A LFPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN2R2-30YLC,115
Base Model
Detailed Description
MOSFET N-CH 30V 100A LFPAK
Package
SOT-669-5
Lifecycle Status
Active
Datasheet
PSMN2R2-30YLC,115 Datasheet
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Technical Specifications
NXP Semiconductors PSMN2R2-30YLC,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
2.15 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (PSMN2R2-30YLC,115 vs PSMN2R2-40PS,127 vs PSMN1R8-40YLC,115 vs PSMN011-30YLC,115)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-669-5 | TO-220AB | SOT-669-5 | SOT-669-5 |
| Mounting Type | SMD/SMT | Through Hole | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 175°C | - 55°C ~ + 175°C | -- | - 55°C ~ + 175°C |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| ID Continuous Drain Current | 100 A | 100 A | -- | 37 A |
| Part Aliases | 934065191115 | 934063915127 | -- | 934066011115 |
| Pd Power Dissipation | 141 W | 306 W | -- | 29 W |
| Qg Gate Charge | 55 nC | 130 nC | -- | 10.3 nC |
| Rds on Drain Source Resistance | 2.15 mOhms | 1.75 mOhms | -- | 11.6 mOhms |
| Technology | Si | Si | -- | Si |
| Action |
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