NXP Semiconductors PSMN102-200Y,115 MOSFETs
N-channel TrenchMOS standard level FET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN102-200Y,115
Detailed Description
N-channel TrenchMOS standard level FET
Package
SOT669-5
Lifecycle Status
Production
Datasheet
PSMN102-200Y,115 Datasheet
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Technical Specifications
NXP Semiconductors PSMN102-200Y,115 MOSFETs technical specifications.
General
RoHS
Yes
Lifecycle Status
Production
Type Number
PSMN102-200Y
Channel Type
N
Nr of Transistors
1
Vds Max V
200
Rdson Max Vgs 10 Vm
102
Tj Max C
150
ID Max a
21.5
Qgd Typ Nc
10.1
Alternate Parts Comparison (PSMN102-200Y,115 vs PSMN3R9-60PSQ vs PSMN2R4-30YLDX vs PSMN8R3-40YS,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT669-5 | TO-220-3 | SOT-669-5 | SOT669-5 |
| Mounting Type | -- | Through Hole | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | - 55°C ~ + 175°C | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | -- | 130 A | 100 A | 70 A |
| Part Aliases | -- | 934067464127 | 934067965115 | 934063936115 |
| Pd Power Dissipation | -- | 263 W | 106 W | 74 W |
| Qg Gate Charge | -- | 103 nC | 31.3 nC | 20 nC |
| Rds on Drain Source Resistance | -- | 2.94 mOhms | 2.4 mOhms | 8.3 mOhms |
| Technology | -- | Si | Si | Si |
| Action |
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