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NXP Semiconductors PMDPB58UPE,115 MOSFETs

20 V dual P-channel Trench MOSFET

120,000 ProductionNXP SemiconductorsDFN-2020-6$1.51
PMDPB58UPE,115 DFN-2020-6 package illustration

Same model may have multiple batches, images only for reference.

PMDPB58UPE,115
Manufacturer
Part Number (MPN)
PMDPB58UPE,115
Detailed Description
20 V dual P-channel Trench MOSFET
Package
DFN-2020-6
Lifecycle Status
Production
Datasheet
PDF PMDPB58UPE,115 Datasheet
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Technical Specifications

NXP Semiconductors PMDPB58UPE,115 MOSFETs technical specifications.

General

RoHS
Yes
Lifecycle Status
Production
Type Number
PMDPB58UPE
Channel Type
P
Nr of Transistors
2
Vds Max V
-20
Vgs Max V
8
Rdson Max Vgs 4 5 Vm
67
Rdson Max Vgs 2 5 Vm
95
Tj Max C
150

Alternate Parts Comparison (PMDPB58UPE,115 vs PMDPB55XP,115 vs PSMN011-30YLC,115 vs NX7002BKM315)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackageDFN-2020-6DFN-2020-6SOT-669-5SC-101, SOT-883
Lifecycle StatusProductionProduction--Active
Automotive QualifiedNN----
Channel TypePP----
Chemical ContentPMDPB58UPEPMDPB55XP----
Ciss Typ Pf804785----
Coss Typ Pf9580----
Date2012-06-202012-03-15----
ID Max a-4.5-4.5----
Nr of Transistors22----
PackingSOT1118_115SOT1118_115----
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