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NXP Semiconductors PMDPB58UPE,115 MOSFETs

20 V dual P-channel Trench MOSFET

120,000 ProductionNXP SemiconductorsDFN-2020-6$1.51
PMDPB58UPE,115 DFN-2020-6 package illustration

Same model may have multiple batches, images only for reference.

PMDPB58UPE,115
Manufacturer
Part Number (MPN)
PMDPB58UPE,115
Detailed Description
20 V dual P-channel Trench MOSFET
Package
DFN-2020-6
Lifecycle Status
Production
Datasheet
PDF PMDPB58UPE,115 Datasheet
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Technical Specifications

NXP Semiconductors PMDPB58UPE,115 MOSFETs technical specifications.

General

RoHS
Yes
Lifecycle Status
Production
Type Number
PMDPB58UPE
Channel Type
P
Nr of Transistors
2
Vds Max V
-20
Vgs Max V
8
Rdson Max Vgs 4 5 Vm
67
Rdson Max Vgs 2 5 Vm
95
Tj Max C
150

Related Parts Comparison (PMDPB58UPE,115 vs PMDPB55XP,115 vs PSMN011-30YLC,115 vs NX7002BKM315)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageDFN-2020-6DFN-2020-6SOT-669-5SC-101, SOT-883
Lifecycle StatusProductionProduction--Active
Automotive QualifiedNN----
Channel TypePP----
Chemical ContentPMDPB58UPEPMDPB55XP----
Ciss Typ Pf804785----
Coss Typ Pf9580----
Date2012-06-202012-03-15----
ID Max a-4.5-4.5----
Nr of Transistors22----
PackingSOT1118_115SOT1118_115----
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