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NXP Semiconductors PSMN8R3-40YS,115 MOSFETs

N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET / Trans MOSFET N-CH 40V 70A 5-Pin(4+Tab) LFPAK

1,500 ActiveNXP SemiconductorsPSMN8R3SOT669-5$1.71
PSMN8R3-40YS,115 SOT669-5 package illustration

Same model may have multiple batches, images only for reference.

PSMN8R3-40YS,115
Manufacturer
Part Number (MPN)
PSMN8R3-40YS,115
Base Model
Detailed Description
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET / Trans MOSFET N-CH 40V 70A 5-Pin(4+Tab) LFPAK
Package
SOT669-5
Lifecycle Status
Active
Datasheet
PDF PSMN8R3-40YS,115 Datasheet
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Ordering Code Family

PSMN8R3 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

NXP Semiconductors PSMN8R3-40YS,115 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
70 A
Rds on Drain Source Resistance
8.3 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Alternate Parts Comparison (PSMN8R3-40YS,115 vs PSMN8R3-40YS vs PSMN8R3-40YS,115 vs PSMN011-30YLC,115)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSMD/SMTSMD/SMT
Operating Temperature- 55°C ~ + 175°C-55°C ~ 175°C- 55°C ~ + 175°C- 55°C ~ + 175°C
RoHSYesYes with ExemptionYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
PackageSOT669-5LFPAKSOT669-5SOT-669-5
Number of Channels1 Channel--1 Channel1 Channel
ID Continuous Drain Current70 A--70 A37 A
Part Aliases934063936115--934063936115934066011115
Pd Power Dissipation74 W--74 W29 W
Qg Gate Charge20 nC--20 nC10.3 nC
Rds on Drain Source Resistance8.3 mOhms--8.3 mOhms11.6 mOhms
TechnologySi--SiSi
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