NXP Semiconductors PSMN3R9-60PSQ MOSFETs
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN3R9-60PSQ
Detailed Description
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PSMN3R9-60PSQ Datasheet
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Technical Specifications
NXP Semiconductors PSMN3R9-60PSQ MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
130 A
Rds on Drain Source Resistance
2.94 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PSMN3R9-60PSQ vs PSMN2R0-30YLE,115 vs PSMN013-30MLC,115 vs PSMN1R1-25YLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-220-3 | SOT-669-5 | LFPAK-33-8 | SOT-669-5 |
| Lifecycle Status | -- | Production | Production | Production |
| Automotive Qualified | -- | N | N | N |
| Channel Type | -- | N | N | N |
| Chemical Content | -- | PSMN2R0-30YLE | PSMN013-30MLC | PSMN1R1-25YLC |
| Ciss Typ Pf | -- | 5217 | 519 | 5287 |
| Coss Typ Pf | -- | 1015 | 131 | 1121 |
| Date | -- | 2012-09-21 | 2012-04-11 | 2011-04-05 |
| ID Max a | -- | 100 | 39 | 100 |
| Nr of Transistors | -- | 1 | 1 | 1 |
| Packing | -- | SOT669_115 | SOT1210_115 | SOT669_115 |
| Action |
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