Nexperia PSMN3R0-60PS MOSFETs
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN3R0-60PS MOSFETs technical specifications.
General
Related Parts Comparison (PSMN3R0-60PS vs PSMN3R0-30YLDX vs PSMN3R0-30YL,115 vs PSMN3R0-30MLC,115)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes with Exemption | Yes | Yes | Compliant with Exemption |
| Mounting Type | Through Hole | -- | SMD/SMT | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | N | -- | N |
| Package | TO-220AB | SOT-669-5 | SOT-669-5 | -- |
| Action |
Nexperia PSMN3R0-60PS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 3mΩ at 10V gate-source voltage. Packaged in a TO-220AB through-hole mount with 3 pins and a tab, it supports a maximum power dissipation of 306W and operates across a wide temperature range from -55°C to 175°C.