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Nexperia PSMN3R0-60PS MOSFETs

N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current.

In Stock ActiveNexperiaPSMN3R0TO-220ABRoHS
PSMN3R0-60PS TO-220AB package illustration

Same model may have multiple batches, images only for reference.

PSMN3R0-60PS
Manufacturer
Part Number (MPN)
PSMN3R0-60PS
Base Model
Detailed Description
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 3mΩ at 10V gate-source voltage. Packaged in a TO-220AB through-hole mount with 3 pins and a tab, it supports a maximum power dissipation of 306W and operates across a wide temperature range from -55°C to 175°C.
Package
TO-220AB
Key Features
Package: TO-220AB
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF PSMN3R0-60PS Datasheet
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Ordering Code Family

PSMN3R0 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

Nexperia PSMN3R0-60PS MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220AB
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
9.4(Max)

Related Parts Comparison (PSMN3R0-60PS vs PSMN3R0-30YLDX vs PSMN3R0-30YL,115 vs PSMN3R0-30MLC,115)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYes with ExemptionYesYesCompliant with Exemption
Mounting TypeThrough Hole--SMD/SMTSurface Mount
Operating Temperature-55°C ~ 175°C--- 55°C ~ + 175°C-55°C ~ 175°C (TJ)
Channel ModeEnhancement--EnhancementEnhancement
Channel TypeNN--N
PackageTO-220ABSOT-669-5SOT-669-5--
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Nexperia PSMN3R0-60PS MOSFETs Overview

N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 3mΩ at 10V gate-source voltage. Packaged in a TO-220AB through-hole mount with 3 pins and a tab, it supports a maximum power dissipation of 306W and operates across a wide temperature range from -55°C to 175°C.

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