Nexperia PSMN3R0-60PS MOSFETs
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current.

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN3R0-60PS
Base Model
Detailed Description
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 3mΩ at 10V gate-source voltage. Packaged in a TO-220AB through-hole mount with 3 pins and a tab, it supports a maximum power dissipation of 306W and operates across a wide temperature range from -55°C to 175°C.
Package
TO-220AB
Key Features
Package: TO-220AB
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN3R0-60PS Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN3R0-60PS MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220AB
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
9.4(Max)
Alternate Parts Comparison (PSMN3R0-60PS vs PSMN3R0-30YLDX vs PSMN3R0-30YL,115 vs PSMN3R0-30MLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | -- | -- |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -- |
| Number of Pins | 3 | -- | -- | -- |
| RoHS | Yes with Exemption | -- | -- | -- |
| AEC Qualified | No | -- | -- | -- |
| Automotive | No | -- | -- | -- |
| Cage Code | H2HX9 | -- | -- | -- |
| Category | Power MOSFET | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Channel Type | N | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Jedec | TO-220AB | -- | -- | -- |
| Action |
Nexperia PSMN3R0-60PS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 3mΩ at 10V gate-source voltage. Packaged in a TO-220AB through-hole mount with 3 pins and a tab, it supports a maximum power dissipation of 306W and operates across a wide temperature range from -55°C to 175°C.
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