Nexperia BUK7K6R8-40E,115 MOSFETs
Automotive N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 40A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia BUK7K6R8-40E,115 MOSFETs technical specifications.
General
Alternate Parts Comparison (BUK7K6R8-40E,115 vs BUK7K6R8-40E vs BUK98150-55,135 vs BUK7Y07-30B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 175°C |
| Number of Pins | 8 | 8 | 4 | 5 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | -- | -- | -- | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Dual Dual Drain | Dual Dual Drain | Single Dual Drain | Single Triple Source |
| Maximum Continuous Drain Current | 40A | 40A | 5.5A | 75A |
| Action |
Nexperia BUK7K6R8-40E,115 MOSFETs Overview
Automotive N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 40A continuous drain current. This dual-dual drain transistor utilizes TMOS process technology and is housed in an 8-pin LFPAK-D surface-mount package with dimensions of 5.3mm x 4.7mm x 1.05mm. Key specifications include a maximum drain-source on-resistance of 6.8mΩ at 10V, a typical gate charge of 28.9nC, and a maximum power dissipation of 64W, operating across a temperature range of -55°C to 175°C.
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