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Nexperia BUK7K6R8-40E,115 MOSFETs

Automotive N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 40A continuous drain current.

36,830 ActiveNexperiaBUK7K6R8LFPAK-D$1.56RoHS
BUK7K6R8-40E,115 LFPAK-D package illustration

Same model may have multiple batches, images only for reference.

BUK7K6R8-40E,115
Manufacturer
Part Number (MPN)
BUK7K6R8-40E,115
Base Model
Detailed Description
Automotive N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 40A continuous drain current. This dual-dual drain transistor utilizes TMOS process technology and is housed in an 8-pin LFPAK-D surface-mount package with dimensions of 5.3mm x 4.7mm x 1.05mm. Key specifications include a maximum drain-source on-resistance of 6.8mΩ at 10V, a typical gate charge of 28.9nC, and a maximum power dissipation of 64W, operating across a temperature range of -55°C to 175°C.
Package
LFPAK-D
Key Features
Package: LFPAK-D
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF BUK7K6R8-40E,115 Datasheet
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Ordering Code Family

BUK7K6R8 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia BUK7K6R8-40E,115 MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK-D
Pcb
8
Package Length Mm
5.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
1.05(Max)
Configuration
Dual Dual Drain

Alternate Parts Comparison (BUK7K6R8-40E,115 vs BUK7K6R8-40E vs BUK98150-55,135 vs BUK7Y07-30B)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 150°C-55°C ~ 175°C
Number of Pins8845
RoHSYes with ExemptionYes with ExemptionYesYes with Exemption
AEC QualifiedYesYesYesYes
AutomotiveYesYesYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationDual Dual DrainDual Dual DrainSingle Dual DrainSingle Triple Source
Maximum Continuous Drain Current40A40A5.5A75A
Maximum Drain Source Resistance6.8@10VmOhm6.8@10VmOhm150@5VmOhm7@10VmOhm
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Nexperia BUK7K6R8-40E,115 MOSFETs Overview

Automotive N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 40A continuous drain current. This dual-dual drain transistor utilizes TMOS process technology and is housed in an 8-pin LFPAK-D surface-mount package with dimensions of 5.3mm x 4.7mm x 1.05mm. Key specifications include a maximum drain-source on-resistance of 6.8mΩ at 10V, a typical gate charge of 28.9nC, and a maximum power dissipation of 64W, operating across a temperature range of -55°C to 175°C.

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

Suggested replacements

NVMFD5C462NT1GNVMFD5C462NT1Gonsemi
Similaronsemi
Pin YesPkg YesElec Mixed
Power MOSFET 40 V, 70 A, 5.4 mΩ, Dual N-Channel, Logic Level, 1500-REEL

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