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Nexperia BUK7K5R1-30E,115 MOSFETs

N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 40A continuous drain current.

4,560 ProductionNexperiaBUK7K5R1LFPAK-D$4.59RoHS
BUK7K5R1-30E,115 LFPAK-D package illustration

Same model may have multiple batches, images only for reference.

BUK7K5R1-30E,115
Manufacturer
Nexperia
Part Number (MPN)
BUK7K5R1-30E,115
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
BUK7K5R1
Detailed Description
N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 40A continuous drain current. Dual dual drain configuration with two elements per chip, utilizing TMOS process technology. Surface mountable in an 8-pin LFPAK-D package (5.3mm x 4.7mm x 1.05mm max dimensions). Offers low drain-source on-resistance of 5.1mOhm at 10V Vgs and a maximum power dissipation of 68W. Operates across a wide temperature range from -55°C to 175°C.
Package
LFPAK-D
Key Features
Package: LFPAK-D
Lifecycle Status
Production
RoHS State
Yes with Exemption
Datasheet
PDF BUK7K5R1-30E,115 Datasheet
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Ordering Code Family

BUK7K5R1 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia BUK7K5R1-30E,115 MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Lifecycle Status
Production
Package
LFPAK-D
Pcb
8
Package Length Mm
5.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
1.05(Max)

Alternate Parts Comparison (BUK7K5R1-30E,115 vs BUK7K5R1-30E vs BUK98150-55,135 vs BUK7Y07-30B)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
NexperiaBUK7K5R1-30E,115
NexperiaBUK7K5R1-30E
NexperiaBUK98150-55,135
NexperiaBUK7Y07-30B
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 150°C-55°C ~ 175°C
Number of Pins8845
RoHSYes with ExemptionYes with ExemptionYesYes with Exemption
AEC QualifiedYesYesYesYes
AutomotiveYesYesYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationDual Dual DrainDual Dual DrainSingle Dual DrainSingle Triple Source
Maximum Continuous Drain Current40A40A5.5A75A
Maximum Drain Source Resistance5.1@10VmOhm5.1@10VmOhm150@5VmOhm7@10VmOhm
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Nexperia BUK7K5R1-30E,115 MOSFETs Overview

N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 40A continuous drain current. Dual dual drain configuration with two elements per chip, utilizing TMOS process technology. Surface mountable in an 8-pin LFPAK-D package (5.3mm x 4.7mm x 1.05mm max dimensions). Offers low drain-source on-resistance of 5.1mOhm at 10V Vgs and a maximum power dissipation of 68W.

Operates across a wide temperature range from -55°C to 175°C.

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