Nexperia BUK98150-55,135 MOSFETs
N-channel Power MOSFET, 55V drain-source voltage, 5.5A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK98150-55,135
Detailed Description
N-channel Power MOSFET, 55V drain-source voltage, 5.5A continuous drain current. Features TrenchFET process technology, 150mOhm maximum drain-source resistance at 5V. Packaged in a 4-pin SC-73 (TO-261AA) lead-frame SMT with gull-wing leads, suitable for surface mounting. Operates from -55°C to 150°C, with a maximum power dissipation of 8300mW.
Package
SC-73
Key Features
Package: SC-73
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
BUK98150-55,135 Datasheet
Quick Jump:
Technical Specifications
Nexperia BUK98150-55,135 MOSFETs technical specifications.
General
RoHS
Yes
Number of Pins
4
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Basic Package Type
Lead-Frame SMT
Package Family Name
SC
Package
SC-73
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pcb
3
Alternate Parts Comparison (BUK98150-55,135 vs BUK762R9-40E,118 vs BUK761R7-40E,118 vs BUK762R6-60E,118)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 4 | 3 | 3 | 3 |
| RoHS | Yes | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | -- | -- | -- | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single Dual Drain | Single | Single | Single |
| Maximum Continuous Drain Current | 5.5A | 100A | 120A | 120A |
| Action |
Nexperia BUK98150-55,135 MOSFETs Overview
N-channel Power MOSFET, 55V drain-source voltage, 5.5A continuous drain current. Features TrenchFET process technology, 150mOhm maximum drain-source resistance at 5V. Packaged in a 4-pin SC-73 (TO-261AA) lead-frame SMT with gull-wing leads, suitable for surface mounting. Operates from -55°C to 150°C, with a maximum power dissipation of 8300mW.
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