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Nexperia BUK7K5R6-30E,115 MOSFETs

Automotive N-channel enhancement mode power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 40A continuous drain current.

In Stock ActiveNexperiaBUK7K5R6LFPAK-DRoHS
BUK7K5R6-30E,115 LFPAK-D package illustration

Same model may have multiple batches, images only for reference.

BUK7K5R6-30E,115
Manufacturer
Part Number (MPN)
BUK7K5R6-30E,115
Base Model
Detailed Description
Automotive N-channel enhancement mode power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 40A continuous drain current. Surface mountable in an 8-pin LFPAK-D package (5.3mm x 4.7mm x 1.05mm max), this component utilizes TMOS process technology. Key electrical characteristics include a maximum drain-source on-resistance of 5.6 mOhm at 10V, typical gate charge of 29.7 nC, and input capacitance of 1477 pF. Operates across a wide temperature range from -55°C to 175...
Package
LFPAK-D
Key Features
Package: LFPAK-D
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF BUK7K5R6-30E,115 Datasheet
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Ordering Code Family

BUK7K5R6 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia BUK7K5R6-30E,115 MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
8
Number of Channels
2 Channel
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK-D
Pcb
8
Package Length Mm
5.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
1.05(Max)

Alternate Parts Comparison (BUK7K5R6-30E,115 vs BUK7K5R6-30E vs BUK98150-55,135 vs BUK7Y07-30B)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 150°C-55°C ~ 175°C
Number of Pins8845
RoHSYes with ExemptionYes with ExemptionYesYes with Exemption
AEC QualifiedYesYesYesYes
AutomotiveYesYesYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationDual Dual DrainDual Dual DrainSingle Dual DrainSingle Triple Source
Maximum Continuous Drain Current40A40A5.5A75A
Maximum Drain Source Resistance5.6@10VmOhm5.6@10VmOhm150@5VmOhm7@10VmOhm
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Nexperia BUK7K5R6-30E,115 MOSFETs Overview

Automotive N-channel enhancement mode power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 40A continuous drain current. Surface mountable in an 8-pin LFPAK-D package (5.3mm x 4.7mm x 1.05mm max), this component utilizes TMOS process technology. Key electrical characteristics include a maximum drain-source on-resistance of 5.6 mOhm at 10V, typical gate charge of 29.7 nC, and input capacitance of 1477 pF.

Operates across a wide temperature range from -55°C to 175...

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