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Nexperia BUK7K5R6-30E,115 MOSFETs

Automotive N-channel enhancement mode power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 40A continuous drain current.

In Stock ActiveNexperiaBUK7K5R6LFPAK-DRoHS
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BUK7K5R6-30E,115
Manufacturer
Part Number (MPN)
BUK7K5R6-30E,115
Base Model
Detailed Description
Automotive N-channel enhancement mode power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 40A continuous drain current. Surface mountable in an 8-pin LFPAK-D package (5.3mm x 4.7mm x 1.05mm max), this component utilizes TMOS process technology. Key electrical characteristics include a maximum drain-source on-resistance of 5.6 mOhm at 10V, typical gate charge of 29.7 nC, and input capacitance of 1477 pF. Operates across a wide temperature range from -55°C to 175...
Package
LFPAK-D
Key Features
Package: LFPAK-D
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF BUK7K5R6-30E,115 Datasheet
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Ordering Code Family

BUK7K5R6 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Nexperia BUK7K5R6-30E,115 MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK-D
Pcb
8
Package Length Mm
5.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
1.05(Max)
Configuration
Dual Dual Drain

Alternate Parts Comparison (BUK7K5R6-30E,115 vs BUK7K5R6-30E vs BUK98150-55,135 vs BUK7Y07-30B)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 150°C-55°C ~ 175°C
Number of Pins8845
RoHSYes with ExemptionYes with ExemptionYesYes with Exemption
AEC QualifiedYesYesYesYes
AutomotiveYesYesYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
Category--------
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationDual Dual DrainDual Dual DrainSingle Dual DrainSingle Triple Source
Maximum Continuous Drain Current40A40A5.5A75A
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Nexperia BUK7K5R6-30E,115 MOSFETs Overview

Automotive N-channel enhancement mode power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 40A continuous drain current. Surface mountable in an 8-pin LFPAK-D package (5.3mm x 4.7mm x 1.05mm max), this component utilizes TMOS process technology. Key electrical characteristics include a maximum drain-source on-resistance of 5.6 mOhm at 10V, typical gate charge of 29.7 nC, and input capacitance of 1477 pF.

Operates across a wide temperature range from -55°C to 175...

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