Nexperia BUK7K5R1-30E MOSFETs
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK7K5R1-30E
Base Model
Detailed Description
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This 8-pin LFPAK-D surface-mount component offers a low drain-source on-resistance of 5.1mΩ at 10V. Dual dual drain configuration with two elements per chip, utilizing TMOS process technology. Maximum power dissipation is 68W, operating temperature range from -55°C to 175°C.
Package
LFPAK-D
Key Features
Package: LFPAK-D
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
BUK7K5R1-30E Datasheet
Quick Jump:
Technical Specifications
Nexperia BUK7K5R1-30E MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK-D
Pcb
8
Package Length Mm
5.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
1.05(Max)
Configuration
Dual Dual Drain
Alternate Parts Comparison (BUK7K5R1-30E vs BUK7K5R1-30E,115 vs BUK98150-55,135 vs BUK7Y07-30B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 175°C |
| Number of Pins | 8 | 8 | 4 | 5 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Dual Dual Drain | Dual Dual Drain | Single Dual Drain | Single Triple Source |
| Maximum Continuous Drain Current | 40A | 40A | 5.5A | 75A |
| Maximum Drain Source Resistance | 5.1@10VmOhm | 5.1@10VmOhm | 150@5VmOhm | 7@10VmOhm |
| Action |
Nexperia BUK7K5R1-30E MOSFETs Overview
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This 8-pin LFPAK-D surface-mount component offers a low drain-source on-resistance of 5.1mΩ at 10V. Dual dual drain configuration with two elements per chip, utilizing TMOS process technology. Maximum power dissipation is 68W, operating temperature range from -55°C to 175°C.
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